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HL: Fachverband Halbleiterphysik
HL 16: Organic Semiconductors
HL 16.8: Vortrag
Dienstag, 18. März 2025, 11:30–11:45, H14
Low Invasive Deposition of Metal Films on Carbon Nanotubes — •Martin Ernst1,2, Martin Hartmann1,2,3, and Sascha Hermann1,2,3,4 — 1Center for Micro and Nano Technologies, Chemnitz University of Technology, Germany — 2Center for Materials, Architecture and Integration of Nanomembranes, Chemnitz University of Technology, Germany — 3Fraunhofer Institute for Electronic Nano Systems ENAS, Chemnitz, Germany — 4Center for Advancing Electronics Dresden, Dresden University of Technology, Germany
Carbon nanotubes (CNTs) are one of the most promising materials for the next generation of electronics. Their unique one-dimensional electronic structure and their remarkable optical, thermal and mechanical properties makes them ideal candidates for different application scenarios. These range from the integration in transistors for analog and digital applications, as well as their usage in CNT-based gas, bio and stress sensors. One of the key challenges is the realization of a proper CNT-metal contact, in order to effectively transport charge carriers trough an electronic device, such as the carbon nanotube field-effect transistor (CNTFET). In this study we investigated the effects of different deposition parameters on the amount of lattice defects in single-walled semiconducting CNTs by Raman spectroscopy. There, a clear dependency between the amount of introduced defects and the deposition parameters, like the kinetic energy of the incident target atoms, was observed. Moreover, these finding were correlated to electrical results of CNTFETs, that were fabricated with the same deposition parameters.
Keywords: Carbon Nanotubes; Raman Spectroscopy; Defects in Carbon Nanotubes; Thin Films; Carbon Nanotube Field-Effect Transistor