Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 16: Organic Semiconductors
HL 16.9: Talk
Tuesday, March 18, 2025, 11:45–12:00, H14
High-Frequency CNT-based FETs for Radio Frequency Communication — •Martin Hartmann1,2,3, Simon Böttger1,2,3, Martin Ernst1,2, and Sascha Hermann1,2,3,4 — 1Center for Micro and Nanotechnologies, Chemnitz University of Technology, Germany — 2Center for Materials Architecture and Integration of Nanomembranes, Chemnitz University of Technology, Germany — 3Fraunhofer Institute for Electronic Nanosystems ENAS, Chemnitz, Germany — 4Center for Advancing Electronics Dresden, Dresden University of Technology, Germany
High frequency carbon nanotube-based (CNT) field effect transistors (FETs) are a highly promising candidate for future communication electronics due to their high charge carrier mobility and low intrinsic capacitance. It has already been shown in 2019 that this technology surpassed comparable silicon-based radio frequency FETs e.g. in terms of their extrinsic current gain cut-off frequencies as well as maximum frequencies of oscillation [1]. Moreover, in recent years their performance was further enhanced approaching the THz region [2]. We report on the impact of the device geometry as well as the CNT layer properties of high frequency CNTFETs onto their operating speed, linearity and contact resistance. Therefore, the spacers between the gate and the source electrode and gate to drain electrode were varied resulting in extrinsic current gain cut-off frequencies up to 14 GHz. By manipulating the spacer region, the device electrostatics in the CNT-metal contact area are balanced. This impacts the charge carrier injection and reflection at the Schottky-like barriers.
Keywords: Carbon nanotubes; field-effect transistor; high frequency electronics; thin film deposition