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HL: Fachverband Halbleiterphysik
HL 17: 2D Semiconductors and van der Waals Heterostructures III
HL 17.11: Vortrag
Dienstag, 18. März 2025, 12:15–12:30, H15
Enhancement of optoelectronic properties of layered 2D semiconductors — •Borna Radatović1,2, Onur Çakiroğlu2, Hao Li2, Fedor Lipilin1, Aljoscha Soll1, Andres Castellanos-Gomez2, and Zdenek Sofer1 — 1Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, Prague 6, 166 28 Czech Republic — 22D Foundry group. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), E-28049 Madrid, Spain
Standard semiconductor methods for the enhancement of electronic devices' properties, such as doping via ion implantation and similar approaches, do not apply to 2D materials due to their atomical thickness. However, various alternative methods for customization of optoelectronic properties of 2D devices have been investigated, from electric or magnetic fields to substitutional doping, that were demonstrated for many devices, such as light sources, optical modulators and photodetectors. In our work, we focus on photodetectors based on different 2D semiconductors (i.e. MoS2, ZrSe3, Sb2S2O and CuInP2Se6) in monolayer and few-layer forms. We investigated how external strain can modulate the intrinsic optical and electronic properties of 2D materials and enhance photodetectors' performances. Furthermore, we have demonstrated how 2D heterostructures can offer a practical approach to specific custom optoelectronic properties of 2D devices.
Keywords: 2D semiconductors; Photodetectors; Strain; Heterostructures; Optoelectronics