Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: 2D Semiconductors and van der Waals Heterostructures III
HL 17.2: Vortrag
Dienstag, 18. März 2025, 09:45–10:00, H15
MOCVD Growth of two-dimensional, high-mobility InSe — •Robin Günkel1, Milan Solanki1, Daniel Anders2, Markus Stein2, Badrosadat Ojaghi Dogahe1, Oliver Maßmeyer1, Max Bergmann1, Nils Langlotz1, Jürgen Belz1, Sangam Chatterjee2, and Kerstin Volz1 — 1Department of Physics and Material Sciences Center, Philipps-University Marburg, Germany — 2Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus-Liebig-University Giessen, Germany
To advance Moore's Law, transistors must shrink while maintaining performance, but 3D semiconductor-based gates face limitations as their thickness approaches the nanometer scale due to surface scattering effects. 2D materials, such as graphene, offer a promising alternative that combines miniaturization with high field effect mobility. Among these, layered indium selenide (InSe) is a focus for logic devices due to its high mobility. However, the complex phase diagram of InSe poses challenges, often resulting in undesired phases. This study uses metal-organic chemical vapor deposition (MOCVD) to grow homogeneous, single-phase InSe on 2" sapphire by tuning the precursor ratio of DiPSe and TMIn. Growth starts with small nuclei forming a continuous layer, with subsequent layers growing as InSe triangles. Atomic force microscopy, Raman spectroscopy, STEM, and XRD provide insight into the growth behavior and the role of surface chemistry. Terahertz spectroscopy confirms carrier mobilities in the order of 1000 cm^2/(Vs). Ongoing efforts focus on heterostructures with other van der Waals materials to further tailor properties.
Keywords: MOCVD; 2D; III-VI Materials