Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 17: 2D Semiconductors and van der Waals Heterostructures III

HL 17.3: Vortrag

Dienstag, 18. März 2025, 10:00–10:15, H15

Transparent and reproducible contacts to MoS2 nanotube quantum dots — •Robin T. K. Schock¹, Stefan B. Obloh¹, Korbinian Fink¹, Matthias Kronseder¹, Matjaž Malok², Maja Remškar², and Andreas K. Hüttel¹ — ¹Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — ²Solid State Physics Department, Jožef Stefan Institute, 1000 Ljubljana, Slovenia

MoS₂, a leading material among transition metal dichalcogenides, exhibits remarkable optical and electronic properties. However, its high effective electron mass necessitates narrow confinement potentials to achieve single quantum level transport.

Nanotubes offer a compelling solution by naturally confining electrons in two dimensions. Our previous work demonstrated single level transport in nanotube QDs confined to the active device area, using the classical Scotch tape method.[1] Despite this, a major challenge remains in fabricating reliable electrical contacts, as devices still exhibit large resistance variations. We attribute this to the curved geometry of the nanotube surface, leading e.g. to nanogaps between the contact material on the tube and the chip surface.[2]

Here we introduce a contact deposition technique that addresses these challenges, achieving highly improved contact yield and reproducibility. This advancement enables the fabrication of more complex device architectures, as e.g., nanotube QDs on top of 2D material heterostacks. - [1] R. T. K. Schock et al., Adv. Mat. 35, 2209333 (2023); [2] R. T. K. Schock et al., PSSb, 2400366 (2024)

Keywords: MoS2; nanotube; nanoribbon; Coulomb blockade; quantum dot