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Regensburg 2025 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 17: 2D Semiconductors and van der Waals Heterostructures III

HL 17.6: Vortrag

Dienstag, 18. März 2025, 10:45–11:00, H15

Electric field control of the proximity-induced spin-orbit gap in bilayer graphene/WSe2 quantum dots — •Hubert Dulisch1, 2, David Emmerich1, 2, Eike Icking1, 2, Katrin Hecker1, 2, Samuel Möller1, 2, Leonie Müller1, 2, Kenji Watanabe3, Takashi Taniguchi4, Christian Volk1, 2, and Christoph Stampfer1, 212nd Institute of Physics, RWTH Aachen — 2PGI-9, Forschungszentrum Jülich — 3Research Center for Functional Materials, NIMS, — 4International Center for Materials Nanoarchitectonics, NIMS

We investigated induced spin-orbit coupling (SOC) in a bilayer graphene (BLG) quantum dot (QD), which is in proximity to tungsten diselenide (WSe2). Magneto-transport measurements were performed on the Coulomb-resonance of the first charge carrier to extract the spin-orbit gap ΔSO. In-plane magnetic field measurements indicate an increased SOC-induced energy splitting. Out-of-plane field measurements demonstrate a reduced valley g-factor at larger displacement fields, consistent with weaker lateral confinement of the QD wavefunction. Our measurements reveal an enhanced SOC effect that decreases with the applied displacement field, distinguishing it from the behavior observed in pure BLG. We interpret this as a reduced influence of the WSe2, which we attribute to the increased displacement field. This causes the QD to become more localized in the lower layer of the bilayer graphene. Being farther from the WSe2, this layer experiences reduced induced SOC, leading to a diminished spin-orbit gap in the BLG QD.

Keywords: spin-orbit coupling; quantum dots; bilayer graphene; WSe2

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