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HL: Fachverband Halbleiterphysik
HL 17: 2D Semiconductors and van der Waals Heterostructures III
HL 17.7: Vortrag
Dienstag, 18. März 2025, 11:00–11:15, H15
High-Performance and Energy-Efficient Sub-5nm 2D Double-Gate MOSFETs Based on SiAs Monolayers — •Dogukan Hazar Ozbey and Engin Durgun — UNAM - National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
As the demand for high-performance, energy-efficient transistors grows, traditional silicon-based MOSFETs face significant scaling limitations. To overcome these challenges and sustain advancements in semiconductor technology, new materials and device architectures are being explored. In this study, sub-5nm double-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) based on 2D SiAs are investigated using first-principles calculations and the Non-equilibrium Green’s function (NEGF) formalism to assess their potential as a high-performance alternative. SiAs monolayers exhibit an indirect bandgap of 1.58 eV and demonstrate promising electronic properties. Key performance metrics such as the on/off current ratio, subthreshold swing (SS), gate capacitance (Cg), intrinsic delay time (τ), and power-delay product (PDP) are evaluated. Devices with 1 nm and 2 nm underlap (UL) structures show enhanced performance, achieving on-state current (Ion) values up to 1206 µA/µm−1, meeting ITRS-2028 high-performance (HP) standards. The SS ranges from 112 to 142 mV/dec, and minimized delay and power-delay products indicate the suitability of SiAs transistors for ultra-scaled, energy-efficient applications. Results suggest that 2D SiAs transistors offer a promising solution to the scaling challenges of MOSFET technologies.
Keywords: 2D Materials; MOSFET; Non-equilibrium Green's function; Density functional theory