Regensburg 2025 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 2: 2D Semiconductors and van der Waals Heterostructures I
HL 2.4: Vortrag
Montag, 17. März 2025, 10:15–10:30, H15
Current-induced second-harmonic generation in monolayer graphene-devices — •Nele Tornow1, Friederike Renz-Wieland1, Omid Ghaebi1, and Giancarlo Soavi1,2 — 1Institute of Solid State Physics, Friedrich Schiller University Jena, Jena, Germany — 2Abbe Center of Photonics, Friedrich Schiller University Jena, Jena, Germany
In pristine and isolated graphene, second-order nonlinear optical processes are, within the dipole approximation, forbidden due to the invariance under space inversion symmetry. Few studies have suggested that inversion symmetry can be broken by in-plane currents, leading to a measurable second-harmonic generation (SHG) [1,2]. In particular, investigations have shown that interfacial charge trapping between a monolayer graphene and silicon dioxide (SiO2) on silicon substrate results in electrically tunable SHG when driving in-plane currents [2]. To further verify this hypothesis, we study current-tunable second-harmonic emission in two graphene based devices: one high-quality double-encapsulated hexagonal boron nitride/graphene field-effect transistor and one with a graphene-SiO2 interface, finding SHG only in the latter one.
Our findings provide insights into the origin of current-tunable SHG and the mechanisms underlying space inversion symmetry breaking in graphene.
[1] Dean, J. et al., Appl. Phys. Lett. 26, 261910 (2009)
[2] An, Y. et al., Nano Lett. 13, 2104-2109 (2013)
Keywords: Graphene; Symmetry; Harmonic Generation