Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 2: 2D Semiconductors and van der Waals Heterostructures I
HL 2.5: Vortrag
Montag, 17. März 2025, 10:30–10:45, H15
Electron-phonon coupling across the TMD/hBN van der Waals interface — •Gianmarco Gatti1,2, Christophe Berthod3, Julia Issing2, Michael Straub2, Salony Mandloi2, Yann Alexaniann2, Anna Tamai2, and Felix Baumberger2 — 1Department of Physics and Astronomy, Aarhus University, Aarhus, Denmark — 2Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland — 3Department of Theoretical Physics, University of Geneva, Geneva, Switzerland
The lattice mismatch at van der Waals interfaces is widely used to engineer single particle band structures supporting complex quantum phases in two dimensions. Electronic states in van der Waals heterostructures may also couple to bosonic excitations in an adjacent substrate. These interfacial interactions are difficult to identify, and it is commonly assumed that they play a marginal role. Here, we reveal that quasiparticles in monolayer transition metal dichalcogenides (TMDs) are dressed by a remote cloud of phonons in the adjacent hexagonal boron nitride slab. Using angle resolved photoemission, we identify replica bands in the TMDs which are a clear fingerprint of a long-range electron-phonon interaction. We develop a modified Fröhlich model that shows quantitative agreement with the experimental spectral functions and discuss the properties of this model. Our analysis shows that remote electron-phonon coupling is a generic property of interfaces with hBN. This has implications for electron mobilities in 2D materials, for superconductivity and possibly for moiré correlated phases.
Keywords: ARPES; TMDs; van der Waals heterostructures; Electron-phonon coupling