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HL: Fachverband Halbleiterphysik

HL 2: 2D Semiconductors and van der Waals Heterostructures I

HL 2.8: Vortrag

Montag, 17. März 2025, 11:30–11:45, H15

Layer number sensitive Raman modes of atomically thin layered MoS₂ — •Henry Hübschmann¹, Gerhard Berth¹, Klaus Jöns¹, Katharina Burgholzer², and Alberta Bonanni² — ¹PhoQS Institute, CeOPP and Department of Physics, Paderborn University, Paderborn, Germany — ²Johannes Kepler University Linz, Linz, Austria

The material group of TMDCs like molybdenum disulfide has gained great attention in the fields of quantum technologies over the last decade due to their particular electronic and optical properties [1]. 2D-MoS₂ has found many applications in optoelectronics and photonics, where the tunable electronic band gap exhibiting strong strutural dependency is an essential feature [2]. Here Raman spectroscopy represents the method of choice for the layer number identification of such 2D structures [3].
This work deals with layer structure sensitive phonon modes of mechanically exfoliated 2D-MoS₂ utilizing Raman analysis. Regarding the two main phonon modes occuring we successfully observed corresponding Raman shifts for monolayer to nine-layer configurations showing a specific dependency on the layer number, enabling the unambiguous determination of the layer number. Besides the two dominant vibrations many other phonon modes are identified, assigned to the symmetry and analyzed in the same manner. Within our comprehensive study we found other structure sensitive phonon modes, showing specific dependency on the layer number, expanding the set of Raman modes for the investigation of 2D-MoS₂ and its properties.

Keywords: 2D materials; transition metal dichalcogenide; layered MoS2; Raman spectroscopy