Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.11: Poster
Dienstag, 18. März 2025, 10:00–12:30, P3
Characterization of Arsenic- and Antimony Containing Heterostructures Grown by Molecular Beam Epitaxy — •Max H. W. Ziehfreund1, Peter F. Zajac1, Sascha R. Valentin2, Timo A. Kurschat1,2, Rainer Krage2, Arne Ludwig1, and Andreas D. Wieck1 — 1Lehrstuhl für Angewandte Festkörperphysik der Ruhr-Universität Bochum, 44801 Bochum, NRW, Germany — 2Gesellschaft für Gerätebau mbH, Klönnestr. 99, 44143 Dortmund, NRW, Germany
This study focuses on the investigation of the surface morphology of various arsenic- and antimony-containing semiconductor heterostructures grown by molecular beam epitaxy. The objective is to optimize the growth parameters used in fabrication and to gain a better understanding of the underlying growth process. The characterization methods developed and approved for GaAs-based heterostructures are applied to GaSb-heterostructures. The primary methods employed are photoluminescence spectroscopy and atomic force microscopy. It was possible to examine the influence of various parameters, such as the antimony flux used during growth on the epitaxial quality of the grown layers and collect valuable experience for defect-free growth of arsenic- and antimony-containing heterostructures.
Keywords: MBE; GaSb; GaAs; heterostructures