Regensburg 2025 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.12: Poster
Dienstag, 18. März 2025, 10:00–12:30, P3
High Resolution Temperature Mapping of GaSb Wafers during MBE Growth — •Timo A. Kurschat1, Sascha R. Valentin1, Peter Zajac2, Rainer Krage1, and Andreas D. Wieck2 — 1Gesellschaft für Gerätebau mbH, Klönnestr. 99, D-44143 Dortmund — 2Lehrstuhl für angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44801 Bochum
The substrate temperature is one of the most important parameters during MBE growth. Thermocouples and pyrometers, as well as more advanced techniques, measure only a single spot on the wafer at a time. Knowing the temperature distribution allows to optimize the growth parameters from just a single grown sample.
To obtain high-resolution thermal maps we use a commercial SLR camera with its infrared filter removed. The sensor is sensitive up to a wavelength of about 1000 nm and can therefore be used as a high resolution pyrometer. Without substrate rotation and 10 s exposure time, measurements can be made down to TS=400 ∘C. With rotation enabled and a reduced exposure time of 0.25 s, it is still possible to obtain images at the growth temperature of TS=680 ∘C.
Images of quarter 2-inch GaSb wafers show differences of more than 20 K between the center and the corners. The effect of a washer was investigated with this method, which is a ring placed at the backside of the wafer to improve its temperature uniformity. The temperature differences also effect the photoluminescence intensity of a quantum well grown on the wafer.
Keywords: MBE; GaSb; temperature measurement