Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.13: Poster
Dienstag, 18. März 2025, 10:00–12:30, P3
Raman spectroscopy on MBE grown III-V semiconductors heterostructures — •Arijit Chakraborty1, Yiteng Zhang1, Tom Fandrich1, Doaa Abdelbarey1, Tom Rakow1, Krupali Dobariya1, Sulabh Shrestha1, Eddy P. Rugeramigabo1, Michael Zopf1,2, and Fei Ding1,2 — 1Leibniz Universität Hannover, Institute for Solid State Physics, Hannover, Germany — 2Leibniz Universität Hannover, Laboratorium for Nano- und Quantum Engineering, Hannover, Germany
We present micro-Raman spectroscopic measurements on molecular beam epitaxy (MBE) grown semiconductors heterostructures, and quantum dots. This technique offers unique insights into the vibrational modes, crystal structure, strain, alloying effects and defects of grown semiconductor structures, making it invaluable for the optimization of MBE processes. The Raman results for the relaxed material have been interpreted in the framework of the modified random element isodisplacement theory considering different vibrational modes of the lattice with changing compositional range. Optical-phonon deformation potentials have been successfully used to fit the different vibrational phonon frequencies in strained layers of semiconductors. Using comparable theoretical models, a substantial compositional dependency with phononic vibrations is found and established. Disordered activated vibrational modes are investigated for layers produced on various substrates. An analogous conclusion with the peak shift in photoluminescence spectra is reached by analyzing the Raman spectra of herostructures grown on InP-based substrates.
Keywords: Raman spectroscopy; III-V heterostructures; Strained layers