Regensburg 2025 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.14: Poster

Dienstag, 18. März 2025, 10:00–12:30, P3

Copper tin oxide: an amorphous, bipolar, ternary oxide system with tunable electrical and optical properties — •Arne Jörns, Holger von Wenckstern, and Marius Grundmann — Leipzig University, Felix Bloch Institute for Solid State Physics

Copper oxide (CuO) is one of the most studied p-type semiconducting metal oxides [1]. Tin oxide (SnO₂) features high transparency in the visible range, high n-type electrical conductivity and non-toxicity [2]. Due to mismatching crystal structures of CuO and SnO₂ (and their other oxidation states) an amorphous alloy, copper tin oxide (CTO), can form when combining these materials. Depending on growth pressure and cation composition the material can be p-type [1] or n-type making it a promising candidate for complementary amorphous devices. In this work, we investigated physical properties of CTO thin films, deposited by combinatorial pulsed laser deposition of segmented CuO and SnO₂ targets at room temperature and in oxygen atmosphere, as a function of cation composition and growth pressure. The resulting samples are X-ray amorphous and n-type semiconducting with mobilities up to 11 cm²/Vs for Cu/(Cu+Sn)<0.8. Optical and electrical properties can be tuned by varying composition ratio and oxygen pressure. A temperature-dependent Hall effect analysis has led to the conclusion that the percolation model provides the most accurate description. For Cu/(Cu+Sn)>0.8, the samples become p-type conducting and feature low mobilities.
[1] Isherwood et al.: J. Appl. Phys., 118, 105702, (2015)
[2] Ni et al.: Surface and Coating Technology, 206, 4356-4361, (2012)

Keywords: copper tin oxide; pulsed laser deposition; combinatorial material science; composition control; thin film