Regensburg 2025 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.2: Poster

Tuesday, March 18, 2025, 10:00–12:30, P3

low-temperature buffer layer-assisted heteroepitaxial growth of γ-CuI thin films by pulsed laser deposition: tailoring electrical properties — •Yang Chen¹, Michael S. Bar¹, Susanne Selle², Daniel Splith¹, Michael Lorenz¹, Marius Grundmann¹, and Holger v. Wenckstern¹ — ¹Felix Bloch Institute for Solid State Physics, Faculty of Physics and Earth Sciences, Universität Leipzig, 04103 Leipzig, Germany — ²Fraunhofer Institute for Microstructure of Materials and Systems IMWS, 06120 Halle, Germany

As the first discovered p-type transparent conductive material, copper(I) iodide (CuI) is considered to be among the most competitive p-type candidate in the field of transparent electronics. Herein, we introduced a low-temperature buffer-layer-assisted strategy to grow γ-CuI on c-plane sapphire by pulsed laser deposition with unprecedented structural quality and electrical transport properties. By adjusting the growth temperature, we can manipulate the rotation domain structure, control the hole concentration in the range from 10¹⁴ cm⁻³ to 10¹⁹ cm⁻³ and achieve mobility µ_h = 25 cm²V⁻¹s⁻¹ being similar to that of bulk CuI. Based on the temperature dependent Hall-effect measurement, the ionization energy of shallow acceptors E_I,S = 137 ± 8 meV and deeper acceptors E_I,D = 262 ± 23 meV were determined. This strategy not only enables high-quality CuI film preparation, but also to tailor their electrical properties for integration with n-type semiconductors in transparent electronic circuits.

Keywords: copper iodide; wide-band gap; p-type; heteroepitaxial; pulsed laser deposition