Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.6: Poster
Tuesday, March 18, 2025, 10:00–12:30, P3
Photoelectrochemical characterisation of InGaN/GaN nanowire arrays — •Genrietta Steingelb1, Hannah Nell1, Rudolfo Hötzel1, Ruben Neelissen1, Stephan Figge1, Tim Grieb1, Florian Krause1, and Martin Eickhoff1,2 — 1Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany — 2MAPEX Center for Materials and Processes, University of Bremen, Bibliotheksstraße 1, 28359 Bremen, Germany
Group III-nitride materials are known for their stability under physiological conditions, making them ideal candidates for use as electrochemical biosensors [1]. In this work, we present a detection mechanism that combines simultaneous photoluminescence (PL) and photocurrent measurements of InGaN/GaN nanowire (NW) arrays, allowing sensitive and selective detection of redox-active biomolecules. However, the performance of the NW photoelectrode is limited by non-radiative surface recombination of photogenerated carriers at the semiconductor-electrolyte interface, leading to irreversible photooxidation of the NW surface, mainly caused by unpassivated surface states. The deposition of ultrathin metal oxide films is a possibility to suppress such effects. The influence of surface coatings on sensor properties was analysed through photoelectrochemical characterisation, with and without metal oxide coatings. This analysis highlights how surface modifications affect sensor performance for the detection of redox-active molecules in complex biochemical environments. [1] G. Steinhoff, et al., Appl. Phys. Lett. 83, 177 (2003).
Keywords: InGaN/GaN; Nanowires; Biosensor