Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.7: Poster
Tuesday, March 18, 2025, 10:00–12:30, P3
Impact of Surface States on the Performance and Stability of AlGaAs/GaAs HEMT Structures — •Vincent Leon Spreter1,2, Selma Delic1,2, Xuelin Jin1,2, Nils von den Driesch1, Christoph Krause1, Detlev Grützmacher1,2, and Beata Kardynal1,2 — 1Peter Grünberg Institut 9, Forschungszentrum Jülich, 52428 Jülich, Germany — 2Department of Physics, RWTH, 52074 Aachen, Germany
Electrostatic gating is commonly used to define single-electron quantum dots (QDs) in two-dimensional electron gases, such as those in GaAs/AlGaAs heterostructures. It can also be used to tune the electronic states of epitaxial quantum dots. For the use for quantum information processing applications, gated devices must maintain a stable working point over long time.
In our contribution, we investigate the effect of surface preparation of GaAs/AlGaAs heterostructure on the long-term stability of gates on the example of split-gate devices. In addition, we explore the use of passivation layers to mitigate the effects of dangling bonds associated with surface states. We discuss the processing of devices with AlOx passivation and action of electrostatic gates on device performance, offering insights into its potential for optimizing GaAs-based optoelectronic devices.
Keywords: Surface States; Passivation; HEMT; AlGaAs/GaAs Heterojunctions