Regensburg 2025 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.8: Poster
Tuesday, March 18, 2025, 10:00–12:30, P3
Low-temperature RAS of MOVPE-prepared Si(100) surfaces — •Kai Daniel Hanke1, Max Grossmann2, Chris Y. Bohlemann1, Mohammad Amin Zare Pour1, Paszuk Agnieszka1, Runge Erich2, and Hannappel Thomas1 — 11Technische Universität Ilmenau, Fundamentals of Energy Materials, Ilmenau, Germany — 22Technische Universität Ilmenau, Theoretical Physics I, Ilmenau, Germany
Recent studies have shown that As-modified Si(100)-(2 x 1) surfaces prepared in a MOCVD environment exhibit asymmetric hydrogen-passivated Si-As dimers as dominating surface motif, in contrast to the previously assumed symmetric As dimers. Due to the importance of this surface for subsequent nucleation of III-V materials, such as GaP, for high-efficiency solar cell structures, we have performed low-temperature reflection anisotropy spectroscopy measurements, which are extremely surface sensitive, in combination with density functional theory and many-body perturbation theory calculations. We also performed X-ray photoelectron spectroscopy and low-energy electron diffraction measurements for a detailed understanding of the structure and electronic properties of this surface. Our method seeks to improve knowledge of the spectral properties of semiconductor surfaces by combining theoretical understanding with experimental data to understand the complex variables that influence RAS spectra.
Keywords: Silicon Surfaces; Reflection Anisotropy Spectroscopy; Low Temperature; Many-Body Perturbation Theory; Optics