Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.9: Poster
Dienstag, 18. März 2025, 10:00–12:30, P3
Optimization of GaSb(100) Substrate Preparation for MBE Growth of GaSb Layers — •Peter Zajac1, Sascha R. Valentin2, Timo A. Kurschat2, Rainer Krage2, Arne Ludwig1, and Andreas D. Wieck1 — 1Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44801 Bochum, Germany — 2Gesellschaft für Gerätebau mbH, Klönnestr. 99, 44143 Dortmund, Germany
The preparation of epi-ready substrates for MBE growth typically involves degassing and oxide removal.
The latter is often done by thermal processes, resulting in rough interfaces that are associated with pyramidal defects (PDs) in GaSb layers grown on GaSb(100) substrates [1].
This study aims to optimize GaSb substrate preparation and buffer layer growth to reduce PD formation.
We compare standard thermal oxide desorption to methods proposed in the literature, such as Ga-assisted oxide removal [2] and the insertion of an AlAsSb layer into the buffer layer [1].
Using photoluminescence spectroscopy (PL) mapping, we assess quantum well and buffer layer luminescence as indicators of material quality. Additionally, we analyze the surface morphology with atomic force microscopy (AFM), focusing on the properties of pyramidal defects.
[1] Murray, Lee M., et al. J. Vac. Sci. Technol. B 31.3 (2013).
[2] Mathews, Sen, et al. J. Vac. Sci. Technol. B 35.2 (2017).
Keywords: MBE; GaSb; Epitaxy; Defects; Oxide Removal