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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.11: Poster
Dienstag, 18. März 2025, 18:00–20:00, P1
Gate defined exciton confinement in MoSe2. — •Moritz Scharfstädt1, Abdul R. Kanikode1, Lasse Ebeling2, Max Wegerhoff1, Michael Köhl1, Stefan Linden1, Bernd Beschoten2, Christoph Stampfer2, Lutz Waldecker2, and Andrea Bergschneider1 — 1Physikalisches Institut, Universität Bonn, 53115 Bonn, Germany — 2II. Physikalisches Institut, RWTH Aachen University, 52074 Aachen, Germany
Excitons in transition metal dichalcogenides (TMDs) are ideal candidates for strong light-matter interactions due to their high oscillator strength. This has been demonstrated in numerous experiments where 2D semiconductors were embedded in photonic cavities. However, these systems lack strong nonlinearity, necessitating further efforts to realize applications such as single-photon sources. One possible approach could be the spacial confinement of excitons using an in-plane inhomogeneous electric field, as first demonstrated by [1].
We present measurements on a similar system that achieves 1D confinement of excitons along the edge of a few-layer graphene gate. While the excitons are polarized perpendicular to the edge, we observe two orthogonal linear polarization axes of the confined states. This raises questions about the selection rules in such a system.
Furthermore, we show our approach to shape the confinement into a 0D configuration to enhance exciton-exciton interactions and, presumably, the system’s nonlinearity.
Keywords: 2D semiconductors; confined excitons; confinement; TMDs; MoSe2