Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.12: Poster
Tuesday, March 18, 2025, 18:00–20:00, P1
PROBING INTERLAYER EXCITONS IN PARALLEL STACKED FERROELECTRIC MOS2 — •Johannes Krause1, Jan-Niklas Heidkamp1, Swarup Deb3, Kenji Watanabe2, Takashi Taniguchi2, Rico Schwartz1, and Tobias Korn1 — 1University of Rostock, Insitute of Physics, Germany — 2International Center for Materials Nanoarchitectonics, National Institute for MAterials Science, Tsukuba — 3Saha Institute of Nuclear Physics, Kolkata, India
2D Transtion Metal Dichalcogenides (TMDCs) garnered significant scientific interest, due to their unique optical properties. Interestingly, 3R-stacked TMDCs exhibit sliding ferroelectricity, which opens up new platforms for nanoelectronic and memory devices. Here, we investigate the photoluminescene (PL) associated with a 3R-stacked molybdenum disulfide homobilayer, particularly the signals attributed to the interlayer exciton. Additionally, electric fields are applied to control the characteristic properties of the stack. We employ mechanical exfoliation of bulk 3R-grown MoS2-crystals and the deterministic transfer technique to fabricate and transfer the homobilayers onto SiO2 wafers with pre-patterned electrical contacts. We utilize PL measurements to characterize the relevant optical signals. By applying gate voltages across the homobilayer, we explore the optical behavior of the homobilayer stack, enabling precise modulation of exciton properties by controlling charge carrier density and Stark effect.
Keywords: Sliding Ferroelectricity; van der Waals heterostructures; Interlayer Excitons; Photoluminescence