Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.15: Poster
Tuesday, March 18, 2025, 18:00–20:00, P1
Influence of interface dielectric disorder on interlayer excitons in mixed binary/ternary TMD heterostructures — •Mohammed Adel Aly1,2, Emmanuel Oghenevo Enakerakpor2, Hilary Masenda2, and Martin Koch2 — 1Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany — 2Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
The unique properties of transition metal dichalcogenide (TMD) monolayers and their heterostructures offer exceptional tunability. In these heterostructures, interlayer excitonic emission can be tailored based on the selection of the monolayer materials. In this study, we fabricated heterostructures based on binary-ternary monolayers, which offer enhanced tunability of the interlayer exciton emission. To understand the physics behind the interlayer excitons and their photoluminescence linewidths, we measured the photoluminescence of excitons in two TMD heterostructures, MoSe2/Mo0.5W0.5Se2 and WSe2/Mo0.5W0.5Se2, at different temperatures ranging from 10 K - 300 K. Besides neutral excitons and trions, we found that the linewidths of interlayer excitons are significantly broadened due to dielectric disorder caused by the spatial inhomogeneity at the interfaces of the heterostructures. These are important for our understanding of the nature of the interlayer excitons and their tunability for future optoelectronic devices.
Keywords: Van der Waals; Dielectric disorder; Interlayer exciton; Heterostructure; Monolayer TMD