Regensburg 2025 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 29: Poster II

HL 29.1: Poster

Tuesday, March 18, 2025, 18:00–20:00, P1

Electrical Field Effect and Schottky Barriers in FePSe₃ Thin Films — •Paul Perl¹, Lars Thole¹, Sonja Locmelis², and Rolf J. Haug¹ — ¹Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany — ²Institut für Anorganische Chemie, Leibniz Universität Hannover, 30167 Hannover, Germany

Transition metal selenophosphates (MTPs) are a group of promising 2D materials for applications like transistors and photodetectors [1,2]. Among MTPs, iron selenophosphate (FePSe₃) has one of the lowest band gap energies at 1.3 eV [2]. The goal of this work is to examine the influence of the electric field effect on electrical transport and to study the Schottky barriers formed at metal contacts. Moreover, the temperature dependence of the investigated effects is analyzed.

In order to investigate the electrical properties of FePSe₃ in thin films below 30 nm, layers are mechanically exfoliated onto a Si/SiO₂ substrate. Electrical contacts for the exfoliated flakes are fabricated via electron beam lithography and physical vapor deposition. FePSe₃ exhibits a hysteresis in its transport characteristics when the applied backgate voltage is altered, indicating favorable characteristics for memory devices. Furthermore, differences in Schottky barriers for various contact material compositions become apparent, showing their influence on electric transport properties.

[1] T. Xu et al., Advanced Electronic Materials, 7, 2100207 (2021)

[2] M. A. Susner et al., Advanced Materials, 29, 1602852 (2017)

Keywords: Metal Selenophosphates; 2D Material; Electrical Transport; FePSe3; Electrical Field Effect