Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.20: Poster
Tuesday, March 18, 2025, 18:00–20:00, P1
Semiconductor-Metal Interfaces in 2D TMDCs for High-Efficiency Optoelectronic Devices — •Linus Schneider1, Ariane Ufer1, Elena Vinnemeier1, Rebecca Saive2, and Ursula Wurstbauer1 — 1Institute of Physics, University of Münster, Münster, Germany — 2MESA+ Institute for Nanotechnology University of Twente, Enschede, Netherlands
Efficient solar energy conversion requires new materials and technologies that enhance solar cell performance while minimizing material usage. Two-dimensional (2D) materials, specifically transition metal dichalcogenides (TMDCs) like molybdenum disulfide (MoS2), exhibit strong exciton-mediated light-matter interactions, making them ideal for optoelectronic devices and solar energy conversion. A critical challenge for implementation is effective charge carrier extraction at the metal-semiconductor interface. We prepare TMDC flakes using mechanical exfoliation and fabricate semiconductor-metal junctions by transferring these layers onto metallic contacts using a dry viscoelastic stamping technique. The structural and optical properties of these samples are characterized using photoluminescence (PL) and Raman spectroscopy. The charge transfer behavior at the 2D semiconductor-metal interface is probed by localized laser beam-induced current measurements and the local potential change across the junction regions by kelvin probe force microscopy (KPFM).
Keywords: TMDC; photocurrent; solar energy conversion; semiconductors