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HL: Fachverband Halbleiterphysik

HL 29: Poster II

HL 29.21: Poster

Dienstag, 18. März 2025, 18:00–20:00, P1

Advancing 2D Materials for Optoelectronic and Photonic Devices: Insights from WSe₂ — •Bastian Thomßen, Ioannis Caltzidis, and Klaus D. Jöns — PhoQS Institute, CeOPP and Department of Physics, Paderborn University, Paderborn, Germany

Two-dimensional (2D) materials have garnered significant attention due to their unique structural, electronic, and optical properties, which make them ideal candidates for next-generation optoelectronic and photonic devices. [1] Transition metal dichalcogenides (TMDs), such as tungsten diselenide (WSe₂), exhibit remarkable characteristics: in monolayer form, WSe₂ transitions from an indirect to a direct bandgap semiconductor, enhancing light-matter interactions. This property positions WSe₂ as a promising material for applications in light-emitting diodes, lasers, and quantum emitters. [1] The layer-dependent properties of WSe₂, including the transition from an indirect to a direct bandgap, can be effectively characterized using photoluminescence measurements. These allow for precise determination of the layer number, providing valuable insights into the electronic and optical behavior of the material. Such measurements are essential for tailoring the material’s properties for specific optoelectronic and photonic applications.

[1] Maja Groll et al. https://doi.org/10.1002/smll.202311635

Keywords: 2D Materials; WSe2; Transition metal dichalcogenides; optoelectronic and photonic devices; Photoluminescence