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HL: Fachverband Halbleiterphysik

HL 29: Poster II

HL 29.28: Poster

Dienstag, 18. März 2025, 18:00–20:00, P1

Single-photon emission in the van der Waals material hBN — •Akhilesh Dubey, Janne Becker, Robert Schmidt, Steffen Michaelis de Vasconcellos, and Rudolf Bratschitsch — Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany

Single-photon sources are crucial components for quantum networks and communications. Recently, single-photon sources in 2D materials have emerged as robust solid-state light emitters. Promising materials include transition metal dichalcogenides, such as WSe₂, transition metal monochalcogenides (e.g. GaSe), and also hexagonal boron nitride (hBN). Here, we investigate the light emission from single-photon emitters in hBN. We measure photoluminescence spectra of individual centers in hBN nanocrystals and analyze their prominent phonon sidebands. Time-resolved photoluminescence measurements reveal typical lifetimes. Our results are important for devising novel nanoscale devices based on these robust quantum light emitters.

Keywords: Hexagonal boron nitride; Single-photon sources; van der Waals Material; Quantum emitters