Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.30: Poster
Dienstag, 18. März 2025, 18:00–20:00, P1
Tailoring Quantum Emission in Bilayer WSe2 via Strain Engineering — •Jasleen Kaur Jagde1, Palwinder Singh1, Grant Wilbur1, Megha Jain1, Edith Yeung2, David Northeast2, Seid Mohammad2, Jean Lapointe2, Dan Dalacu2, and Kimberley Hall1 — 1Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova Scotia B3H 4R2, Canada — 2National Research Council Canada, Ottawa, Ontario K1A 0R6, Canada
Two-dimensional semiconductors subjected to strain have shown exceptional promise as single-photon emitters, due to their direct bandgap and an ease of integration with photonic structures. Emitters have been observed in a host of monolayer (ML) materials including MoS2, WSe2, WS2, MoTe2 and hBN. Quantum emitters have also recently been discovered in bilayers of TMDs, however their optical properties are less well understood. In this study, we demonstrate site-selective quantum emission in bilayer (BL) WSe2 using strain localized by engineered dielectric nanopillars of varying diameters. Through a systematic investigation of the dependence of quantum emitter properties on strain, we determine the optimum conditions for the observation of bright and narrow photoluminescence emission peaks. We observe a strain-driven blue shift in the emission wavelength that is controllable by the characteristics of the nanopillar. A strong antibunching (g (2)(0) = 0.139) is observed, confirming single photon emission behavior. These results highlight strain engineering of 2D materials as a scalable strategy for on-demand quantum light sources.
Keywords: 2D materials; nanopillars; quantum emission; photoluminescence; second-order correlation