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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.31: Poster
Dienstag, 18. März 2025, 18:00–20:00, P1
Electrical impact of He ion broad beam irradiation on multi-layer WSe2 — •Madhuri Chennur1,2, Zahra Fekri1,2, Ulrich Kentsch1, Gregor Hlawacek1, Jens Zscharschuch1,2, and Artur Erbe1,2 — 1Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328Dresden, Germany — 2TUD Dresden University of Technology, 01062 Dresden, Germany
Nanoelectronics enables the development of innovative, cost-effective, miniaturized, and versatile materials. Among these, 2D materials hold immense potential for tailoring nanoscale functionalities. Structural defects in such materials play a significant role. By analyzing defect types, densities, and distributions, it is possible to unlock insights and exploit them for various applications, such as doping, tuning band gaps, or enhancing catalytic activity.
In this work, the impact of defects in multi-layer WSe2 is explored under the influence of Si/SiO2 and hBN substrates, introduced via a single broad-beam Helium ion irradiation at 7.5 keV. Electrical contacts are patterned using electron beam lithography (EBL), and all measurements are conducted under ambient conditions to assess changes in defect states post-irradiation.
The evolution of defects is monitored over time, with observations made one and two weeks following irradiation. Initially, the devices demonstrate degraded performance but later, their current exceeds pre-irradiation levels. Raman spectroscopy before and after irradiation provides deeper insights into the material's behavior. Additionally, the findings reveal the role of defects in influencing gas-sensing capabilities.
Keywords: Defects; 2D materials; Electrical characterization; Raman spectra