Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.34: Poster
Dienstag, 18. März 2025, 18:00–20:00, P1
Defect induced magnetic phase transition in CrSBr — •Fangchao Long1,2, Mahdi Ghorbani-Asl1, Kseniia Mosina3, Joachim Thomsen4, René Hübner1, Zdenek Sofer3, Florian Dirnberger5, Arkady V. Krasheninnikov1, Slawomir Prucnal1, Manfred Helm1,2, and Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Germany — 2Technische Universität Dresden, Germany — 3University of Chemistry and Technology Prague, Czech Republic — 4Forschungszentrum Jülich, Germany — 5Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Germany
As an air-stable van der Waals magnetic semiconductor, CrSBr is receiving great research attention due to its exceptional properties. Below the Néel temperature of 132 K, CrSBr exhibits a typical A-type antiferromagnetic order comprised of antiferromagnetically coupled ferromagnetic monolayers. This special structure makes it susceptible to external stimuli, such as ion irradiation. In this work, we present the magnetic phase transition from antiferromagnetic to ferromagnetic in CrSBr crystals irradiated by non-magnetic ions. We observe the rise and fall of the ferromagnetic phase in antiferromagnetic CrSBr with increasing the irradiation fluence. Raman spectroscopy reveals phonon softening, suggesting the formation of defects. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggest that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favor a ferromagnetic order between the layers.
Keywords: CrSBr; Phase transition; Ferromagnetism; Ion implantation; Defect engineering