Regensburg 2025 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 29: Poster II

HL 29.39: Poster

Tuesday, March 18, 2025, 18:00–20:00, P1

Assessing Wafer Growth Success in Quantum Dot Photonic Device Fabrication — •Severin Krüger^1,2, Elias Kersting¹, and Arne Ludwig¹ — ¹Ruhr-Universität Bochum, Bochum, Germany — ²Sparrow Quantum Aps, Copenhagen, Denmark

Molecular beam epitaxy (MBE) is crucial for fabricating photonic devices, including commercially viable single photon sources (SPS) based on quantum dots (QDs) [1]. Precise control of QD properties and surrounding layer design is essential for optimal device performance. We employ bandstructure and photonic simulations to design heterostructures, followed by comprehensive optical characterization of reference samples using photoluminescence (PL) mapping, Hall measurements, and surface analysis. This efficient characterization cycle allows rapid optimization of growth parameters on full 3" wafers, significantly reducing development time compared to direct SPS fabrication and testing. However, distributed Bragg reflectors in SPS wafers introduce PL signal artifacts due to reflectivity oscillations and stop bands, which significantly modulate the collectable photon yield across different wavelengths, alternately enhancing and suppressing the signal. We present our reference sample approach, characterization methods, and techniques to correct for optical stack-induced PL artifacts, enabling accurate assessment of MBE-grown structures for SPS applications.

[1] R. Uppu et al., Nature Technology 16, 1308-1317, (2022) [2] H.G. Babin et al., Nanomaterials 11, 2703, (2021)

Keywords: single photon source; molecular beam epitaxy; atomic force microscopy; spectroscopy