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HL: Fachverband Halbleiterphysik

HL 29: Poster II

HL 29.41: Poster

Dienstag, 18. März 2025, 18:00–20:00, P1

Secondary electron spectrometer for deterministic single ion implantation — •Priyal Dadhich, Nico Klingner, and Gregor Hlawacek — Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf(HZDR), Dresden, Germany

The deterministic placement of single ions is essential for programmable quantum computers based on the nuclear spin of the donor atom to serve as a spin qubit.

Spatially revolved single ion implantation requires the reliable detection of implantation events. Our approach utilizes SEs generated during ion impact. To optimize the detection we use a windowless silicon drift detector (SDD) biased up to +10 kV. The SDD measures the electron energy through electron-hole pair generation, enabling quantifying the number of electrons by counting pile-up pulses [1]. Given the low average SE yield per single-ion impact, optimizing the extraction geometry is crucial for achieving the maximum possible success rate.

We use the open-source three-dimensional ion optical C++ library, IBSIMU[2], to simulate a realistic extraction design for efficient SE collection on the detector’s active area. For the highest detection efficiency, we must also consider the unlikely event of backscattering of the electrons from the SDD. The extraction geometry is designed to recapture these electrons and re-accelerate them into the detector’s active area.

[1] F. Aumayr et. al., Applied Surface science,47(2):139*147, 1991.

[2] Taneli Kalvas et. al., Review of Scientific Instruments, 81(2), 2010.

Keywords: Secondary electron spectrometer; Spin qubit; Deterministic single ion implantation; Ion beam simulations(IBSIMU); Extraction geomatry design