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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.4: Poster
Dienstag, 18. März 2025, 18:00–20:00, P1
Ferroelectric Potential Investigations of 3R MoS2 through fast Optical Measurements — •Jan-Niklas Heidkamp1, Swarup Deb1,2, Takashi Taniguchi3, Kenji Watanabe3, Rico Schwartz1, and Tobias Korn1 — 1Institute of Physics, University of Rostock, Rostock, Germany — 2Saha Institute of Nuclear Physics, Kolkata, India — 3National Institute for Material Science, Tsukuba, Japan
In recent years, sliding ferroelectricity has emerged as a topic of significant interest due to its possible application in nonvolatile random-access memory. This phenomenon is unique to two-dimensional van der Waals materials, where vertical polarization switching is induced by in-plane sliding of the constituent layers. The resulting polarization is influenced by the intrinsic stacking order, creating distinct polarization regions separated by domain walls. These regions, along with the domain walls, can be manipulated using an external vertical electric field, enabling a switchable system that retains the environmental robustness of van der Waals materials under ambient conditions.
In this study, we investigate 3R-MoS2 using various optical measurement techniques at room temperature. The spatially resolved measurements reveal clear signal changes corresponding to different ferroelectric stacking orders and variations in layer count. Our findings demonstrate that fast optical mapping at room temperature is a reliable method for probing ferroelectric potential steps in 3R-stacked samples. This approach does not require a conductive substrate or backing, making it more versatile than traditional Kelvin Probe Force Microscopy (KPFM) techniques.
Keywords: TMDC; heterostructures; ferroelectric; 3R MoS2