Regensburg 2025 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 29: Poster II

HL 29.50: Poster

Tuesday, March 18, 2025, 18:00–20:00, P1

Stark Effect of color centers studied from a- and m-face 4H-SiC — •Fabio Candolfi, Johannes A. F. Lehmeyer, Michael Krieger, and Heiko B. Weber — Friedrich-Alexander Universität Erlangen-Nürnberg, Lehrstuhl für Angewandte Physik, Staudtstr. 7 91058 Erlangen, Germany

Color centers in silicon carbide (SiC) can operate as single photon sources and are well suited for photonic quantum technology. As compared to the intensively studied diamond platform, SiC provides both mature semiconductor functionality and process technology.

We investigated the Stark effect response of two different color centers in 4H-SiC; the established silicon vacancy defect and the less known TS defect. Both were studied from the c-face, but the photon emission occurs predominantly in the basal plane. This is why in this work low-temperature photoluminescence across the a- and m-faces were studied with Stark effect along three principal crystallographic axes. From the emission polarization of shifted and split photoluminescence lines we obtain the orientation of the dipole moment.

Keywords: color center; silicon carbide; Stark effect