Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.51: Poster
Tuesday, March 18, 2025, 18:00–20:00, P1
InGaAs quantum dots grown by local droplet etching — •Selma Delić1,2, Xuelin Jin1,2, Nils von den Driesch1, Elias Kersting3, Arne Ludwig3, Alexander Pawlis1, Detlev Grützmacher1,2, and Beata Kardynał1,2 — 1Peter Grünberg Institut, Forschungszentrum Jülich, 52428 Jülich, Germany — 2Department of Physics, RWTH, 52074 Aachen, Germany — 3Lehrstuhl für angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany
Gallium arsenide quantum dots (QDs) grown using local droplet etching epitaxy (LDE) have been shown to be excellent single photon emitters. Integrated into GaAs heterostructures with two-dimensional electron gases (2DEG), the LDE QDs could facilitate spin-photon interface to spin-qubits in gated QDs, provided that photon absorption in the 2DEG in eliminated.
In this contribution, we demonstrate that the wavelength of LDE quantum dots can be effectively tuned by filling the holes edged in Al0.33Ga0.67As with InxGa1-xAs with x=10-20%. At such compositions, two-dimensional growth is expected and quantum dot formation should follow the same mechanism as that of GaAs QDs. We characterise the QDs using atomic force microscopy, low-temperature photoluminescence (PL), and microPL and analyse the effects of the growth temperature, etching step parameters, and filling material on the wavelength of QD emission. Furthermore, we show how the wetting layer emission wavelength can be used to evaluate the thickness and composition of the deposited InxGa1-xAs.
Keywords: quantum dots; molecular beam epitaxy; spin-photon interface