Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.52: Poster
Tuesday, March 18, 2025, 18:00–20:00, P1
Tuning InGaAs quantum dots for quantum interface for heterogeneous quantum network — •Xuelin Jin1,2, Selma Delic1,2, Zheng Zeng1,2, Nils von den Driesch1,3, Alexander Pawlis1,3, Detlev Grützmacher1,2,3, and Beata Kardynal1,2 — 1Peter Grünberg Institute 9, Forschungszentrum Jülich, 52425 Jülich, Germany — 2Department of Physics, RWTH Aachen, 52074 Aachen, Germany — 3Peter Grünberg Institute 10, Forschungszentrum Jülich, 52425 Jülich, Germany
Abstract. Connecting different spin qubits using photonic qubits could facilitate building networks that would benefit from the inherent advantage of the individual subsystems. An efficient transfer of a qubit from a photon to the spin qubit requires matching of the energies and the bandwidths of the photon wave packet and the spin qubit optical transitions.
We discuss the design of an epitaxial quantum dot device that aim to use electrostatic gates to manipulate the bandwidth of the photons emitted from InAs QDs to improve the match to the spin qubits realized in trapped ions. We show that application of electrostatic fields can change the overlap of the e-h wavefunctions. We will discuss the conditions that the heterostructure has to fulfill for the device operation and will show the status of fabrication, which has centered on optimizing the epitaxial growth of the material. Finally, we will show the results of its characterisation aiming to show how the electronic states in these quantum dots evolve with voltages applied to the surface gates.
Keywords: Quantum Dot; Single photon emitter; Spin qubits; Quantum interface; Quantum netrwork