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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.53: Poster
Dienstag, 18. März 2025, 18:00–20:00, P1
Spin-Dependent Processes Involving Defects Caused by Lithography — •Henry Stock1,3, Michael Göldl1,3, Niklas Bruckmoser2,3, Leon Koch2,3, Stefan Filipp2,3, and Martin S. Brandt1,3 — 1Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany — 2Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Straße 8, 85748 Garching, Germany — 3School of Natural Sciences, Technische Universität München, James-Franck-Straße 1, 85748 Garching, Germany
A precise knowledge of the paramagnetic defects present in quantum devices and their contribution to magnetic noise can be crucial for the optimization of such devices. However, conventional electron spin resonance experiments are often not sensitive enough to observe the defects. Using spin selection rules governing, e.g., recombination, the sensitivity of magnetic resonance experiments can be improved significantly. In its pulsed form, this so-called electrically detected magnetic resonance (EDMR) even enables the time-resolved study of the spin dynamics of the defects, allowing for measurements of the formation and recombination of spin pairs, as well as of the spin relaxation times T1 and spin decoherence times T2. Here, we present a study where we investigate paramagnetic Pb0 defects and lithographically induced fluorine defects in Si substrates used for the manufacturing of superconducting transmon qubits. Our results are important to illuminate the role these defects play in flux noise and their influence on qubit coherence.
Keywords: Defects; Silicon; Electron Spin Resonance; Quantum Computing; Transmon Qubits