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HL: Fachverband Halbleiterphysik

HL 29: Poster II

HL 29.65: Poster

Dienstag, 18. März 2025, 18:00–20:00, P1

Single-electron charging events on quantum dots in InSb nanowires — •Marcus Liebmann¹, Kanji Furuta¹, Sasa Gazibegovic², Diana Car², Erik Bakkers², and Markus Morgenstern¹ — ¹II. Phys. Inst. B, RWTH Aachen Univ., Germany — ²Dept. of Appl. Phys., Eindhoven Univ., The Netherlands

As a first step to realize a single-electron counting tip for a scanning tunneling microscope, we investigate the charge state of a quantum dot (QD) by recording the current through a floating-gate-coupled sensor dot. InSb nanowires are placed mechanically onto bottom gates with hexagonal boron nitride (h-BN) as a dielectric to define two quantum dots capacitively coupled via a floating gate. At zero source-drain voltage and high barriers, charge stability diagrams are acquired, and time series of the QD charge state reveal single-electron charging events. These are analyzed with respect to full counting statistics. The Fano factor and factorial cumulants [1] are extracted to search for correlation effects.

[1] P. Stegmann et al., Phys. Rev. B 92, 155413 (2015).

Keywords: charge detection; single-electron counting; floating gate; transport