Regensburg 2025 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 29: Poster II

HL 29.75: Poster

Dienstag, 18. März 2025, 18:00–20:00, P1

Cyclic Growth of InAs Quantum Dots: Exploring Structure- Property Relations for Telecom O-Band Applications — •Lennart Anderson^1,2, Danial Kohminaei¹, Severin Krüger^1,3, Marcel Schmidt¹, Nikolai Spitzer¹, Peter Zajac^1,4, Andreas Wieck¹, and Arne Ludwig¹ — ¹Angewandte Festkörperphysik, Ruhr-Universität Bochum — ²ICAMS, Ruhr-Universität Bochum — ³Sparrow Quantum ApS, Copenhagen — ⁴Gesellschaft für Gerätebau mbH, Dortmund

Quantum dots (QDs) are promising single-photon emitters that could transform long-range quantum communication within telecom optical fiber transparency windows. In this study, we grow self-assembled InAs QDs using the Stranski-Krastanov growth mode, enhanced by a strain reduction layer to achieve emission at 1.3 µm in the telecom O-band. By employing cyclic sub-monolayer deposition, we observe periodic modulations in QD density, emission wavelength, and geometric properties, driven by nucleation waves, i.e. a new generation of QDs is formed each time a critical material amount for nucleation is reached. We explore the correlations between the structural characteristics and opto-electronic properties by atomic force microscopy and photoluminescence as well as capacitance-voltage spectroscopy. Our results identify optimal regions for QD density and emission wavelength across 3-inch wafers and propose a modified deposition scheme to enhance the usable area of the wafers.

Keywords: InAs Quantum Dots; Critical Layer Thickness; Atomic Force Microscopy; Photoluminescence Spectroscopy; Opto-electronic Properties