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HL: Fachverband Halbleiterphysik
HL 29: Poster II
HL 29.79: Poster
Dienstag, 18. März 2025, 18:00–20:00, P1
Marker-based deterministic EBL integration of GaAs quantum dots (QDs) into electrically tunable Circular Bragg Gratings (eCBGs) at a wavelength of 780 nm — •Dinara Basharova1, Mudi Priyabrata1, Avijit Barua1, Setthanat Wijitpatima1, Andreas D. Wieck2, Sven Rodt1, Arne Ludwig2, Richard Warburton3, and Stephan Reitzenstein1 — 1Institute of Solid State Physics, Technische Universität Berlin, D-10623 Berlin, Germany — 2Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, DE-44780 Bochum, Germany — 3Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
Integration of high-quality quantum emitters with photonic structures is essential for advancing quantum information technologies. We present a marker-based deterministic electron beam lithography (EBL) technique to integrate Gallium Arsenide (GaAs) quantum dots (QDs) into electrically contacted Circular Bragg Gratings (eCBGs) at an emission wavelength of 780 nm, combined with a PIN-diode structure. eCBG devices not only enhance the photon extraction efficiency through a circularly symmetric cavity design but also provide precise electrical control over the QD emission. This enables fine-tuning of the wavelength, addressing spectral mismatches, and stabilizing the charge environment around the QD, critical for high-performance quantum light sources. Therefore, combining the eCBG design with deterministic fabrication techniques ensures that the QDs are precisely positioned at the cavity center, maximizing light-matter interaction.
Keywords: Quantum Dots; electrically-contacted Circular Bragg Grating; Electron Beam Lithography; Heterostructures; PIN-diode structure