Regensburg 2025 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 31: Focus Session: Young Semiconductor Forum Poster

HL 31.10: Poster

Wednesday, March 19, 2025, 12:15–13:00, H13

Transport properties of quantum dots for single-electron pumps — •Johannes C. Bayer, Thomas Gerster, Dario Maradan, Frank Hohls, and Hans W. Schumacher — Physikalisch-Technische Bundesanstalt, 31668 Braunschweig, Germany

A single-electron pump (SEP) is a device emitting a well-defined number of n electrons per cycle of an external drive. With driving frequency f and elementary charge e, this results in a current of I = nef. Since the revision of the SI system, the elementary charge e hereby is an exact value, so that SEPs provide a suitable basis for a quantum current standard. The accuracy of this current is directly related to erroneous cycles, where the emitted number of electrons deviates from n. Our SEP devices are based on electrostatically defined quantum dots in GaAs/AlGaAs two-dimensional electron gases. In such devices, the tunnel barriers as well as the energy levels are controllable via gate voltages. Based on multiple quantum dot devices we here investigate relations between transport properties and SEP operation characteristics.

Keywords: quantum dots; single-electron pump