Regensburg 2025 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 31: Focus Session: Young Semiconductor Forum Poster

HL 31.2: Poster

Mittwoch, 19. März 2025, 12:15–13:00, H13

Reducing waste through substrate reuse: a pathway to cost-effective iii-v optoelectronics — •radouane ennadir — 3IT, Sherbrooke University, Sherbrooke, QC, Canada

III-V materials, such as Gallium Arsenide (GaAs), are widely used in optoelectronic devices due to their superior electronic and optical properties. However, the high cost of III-V substrates, primarily made from Ge or other expensive materials, represents a significant barrier to the widespread adoption of these technologies.

Our research focuses on reducing waste in the production of III-V optoelectronics through the reuse of Germanium (Ge) substrates. In this study, we propose a novel approach to mitigate substrate waste by reusing Ge substrates in the fabrication of III-V optoelectronics. By carefully optimizing the recycling process, including substrate cleaning, surface treatment, and the integration of new III-V layers, we aim to significantly reduce material costs without compromising device performance. This approach not only enhances the sustainability of optoelectronic manufacturing but also provides a cost-effective pathway to large-scale production of III-V-based devices. The findings of this study contribute to both environmental sustainability and economic viability in the growing field of optoelectronics, opening up new opportunities for the development of advanced, cost-effective optoelectronic devices.

Keywords: Germanium substrate; III-V semiconductors; Substrate reuse; Cost-effective technology; Sustainable optoelectronics