HL 32: Nitrides: Preparation and Characterization I
Mittwoch, 19. März 2025, 09:30–11:00, H15
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09:30 |
HL 32.1 |
Optical properties of asymmetric cubic AlGaN/GaN quantum wells — •Erik Graper, Elias Baron, Martin Feneberg, Tobias Wecker, Donat J. As, and Rüdiger Goldhahn
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09:45 |
HL 32.2 |
Nanoscale characterization of cascaded GaN/InGaN LEDs with tunnel junction — •Konstantin Wein, Gordon Schmidt, Frank Bertram, Holger Eisele, Peter Veit, Olga August, Christoph Berger, Armin Dadgar, André Strittmatter, and Jürgen Christen
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10:00 |
HL 32.3 |
Understanding the Effect of Defects in Ta3N5 Thin Films on Charge Carrier Dynamics — •Jan Luca Blänsdorf, Lukas M. Wolz, Matthias Kuhl, Johannes Dittloff, Nina Miller, Gabriel Grötzner, Ian D. Sharp, and Johanna Eichhorn
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10:15 |
HL 32.4 |
Accessing and evaluating the full growth window of PAMBE grown AlGaN/GaN nanowires — •Rudolfo Hötzel, Marten Wilkens, Florian Krause, Andreas Rosenauer, Stephan Figge, and Martin Eickhoff
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10:30 |
HL 32.5 |
Nanoscale multi-spectroscopic characterisation of InGaN pseudo-substrates grown on nanowire arrays — •Aidan Flynn Campbell, Jingxuan Kang, Huaide Zhang, Oliver Brandt, Lutz Geelhaar, and Jonas Lähnemann
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10:45 |
HL 32.6 |
Measuring solute concentrations in ammonothermal solutions via in situ X-ray absorption - estimating detection limits for novel nitrides — •Rajesh Chirala, Ege N. Civas, and Saskia Schimmel
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