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HL: Fachverband Halbleiterphysik
HL 32: Nitrides: Preparation and Characterization I
HL 32.1: Vortrag
Mittwoch, 19. März 2025, 09:30–09:45, H15
Optical properties of asymmetric cubic AlGaN/GaN quantum wells — •Erik Graper1, Elias Baron1, Martin Feneberg1, Tobias Wecker2, Donat J. As2, and Rüdiger Goldhahn1 — 1Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Germany — 2Department Physik, Universität Paderborn, Germany
Group III-nitrides, particularly AlGaN and GaN, are essential materials for high-performance electronic and optoelectronic devices. While conventional hexagonal AlGaN/GaN high-electron-mobility transistors (HEMTs) operate in normally-on mode, cubic AlGaN/GaN structures enable normally-off operation - a crucial advantage for energy-efficient power electronics. These cubic AlGaN/GaN heterostructures offer additional benefits such as the absence of internal polarization fields in (001) orientation.
In this study, we investigate asymmetric cubic AlGaN/GaN double quantum wells (2.5 nm and 0.6 nm) with varying barrier thicknesses, grown by plasma-assisted molecular beam epitaxy on 3C-SiC/Si substrates in (001) orientation. We employed complementary spectroscopic techniques to analyze quantum well coupling, combining photoluminescence (PL) measurements using continuous-wave lasers (266 nm and 325 nm) with photoluminescence excitation (PLE) spectroscopy using a tunable pulsed laser (325 - 354 nm). The acquired spectra were analyzed to determine wavelength dependent luminescence of the 2.5 nm quantum well.
Keywords: AlGaN; GaN; photoluminescence spectroscopy; double quantum wells; asymmetric quantum wells