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11:15 |
HL 33.1 |
Influence of barrier height variations on the efficiency of AlGaN-based 225nm LEDs — •Markus A. Blonski, Jakob Höpfner, Tim Kolbe, Sylvia Hagedorn, Hyun Kyong Cho, Jens Rass, Paula Vierck, Tim Wernicke, Michael Kneissl, and Markus Weyers
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11:30 |
HL 33.2 |
Homoepitaxy on AlN-bulk substrates with different off-cut angles — •Sebastian Krüger, Sarina Graupeter, Massimo Grigoletto, Marcel Schilling, Sylvia Hagedorn, Carsten Hartmann, Thomas Straubinger, Tim Wernicke, and Michael Kneissl
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11:45 |
HL 33.3 |
Stabilizing Ta3N5 Thin Films Photoelectrodes by Defect Engineering — •Lukas M. Wolz, Gabriel Grötzner, Tim Rieth, Laura I. Wagner, Matthias Kuhl, Johannes Dittloff, Guanda Zhou, Saswati Santra, Verena Streibel, Frans Munnik, Ian D. Sharp, and Johanna Eichhorn
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12:00 |
HL 33.4 |
Studying the carrier distribution of multicolor far-UVC LEDs by temperature dependent electroluminescence measurements — •Jakob Höpfner, Franz Biebler, Florian Kühl, Marcel Schilling, Anton Muhin, Massimo Grigoletto, Martin Guttmann, Gregor Hoffmann, Friedhard Römer, Tim Wernicke, Berndt Witzigmann, and Michael Kneissl
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12:15 |
HL 33.5 |
Influence of strain reduced HTA-AlN/sapphire templates with different offcuts on the performance of UVC LEDs — •Sarina Graupeter, Finn Kusch, Paula Vierck, Sylvia Hagedorn, Markus Weyers, Tim Wernicke, and Michael Kneissl
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12:30 |
HL 33.6 |
Characterisation of a Pt on-chip counter electrode on a GaN/AlGaN-ISFET Wheatstone bridge as pH-sensor — •Alexander Hinz, Niklas Krantz, Stephan Figge, and Martin Eickhoff
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12:45 |
HL 33.7 |
Efficiency analysis of 233 nm far-UVC LEDs with varied DPD AlGaN layer thickness beyond 298 K — •Paula Vierck, Jakob Höpfner, Marcel Schilling, Massimo Grigoletto, Markus Blonski, Tim Wernicke, and Michael Kneissl
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