Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: Materials and Devices for Quantum Technology II
HL 36.10: Vortrag
Mittwoch, 19. März 2025, 17:30–17:45, H13
Control of NV centre generation in pulsed plasma chemical vapor deposition (CVD) grown diamonds — •Ravi Teja Aditya1, Felix Hoffmann1, Patrik Stranak1, Volker Cimalla1, and Rüdiger Quay1,2 — 1Fraunhofer Institute for Applied Solid State Physics, Tullastraße 72, D-79108 Freiburg, Germany — 2Department for Sustainable Systems Engineering INATECH, University of Freiburg, 79108 Freiburg, Germany
Nitrogen vacancy (NV) centres in diamond have emerged to be an integral part in many quantum computing and quantum sensing applications. High and precise NV density is required especially for quantum sensing applications. There is a need for control of nitrogen incorporation and NV yield without compromising crystal quality and growth rate. Although higher power levels ensure higher nitrogen incorporation, it is often limited by temperature. Investigating pulsed plasma chemical vapor deposition (CVD) for this purpose proved to be beneficial to control the NV generation. A pulsed plasma generator was used to reach higher power levels while maintaining an appropriate temperature by adjusting the duty cycle accordingly. Time resolved optical emission spectroscopy (OES) was used to observe the plasma composition during microwave pulses. A pulse length dependent activation of CN radicals was observed which led to a variation in NV densities in grown films. We present the results of variation of NV densities in diamond films caused by variation in pulse length, MW power and duty cycle.
Keywords: NV center; pulsed CVD; diamond growth; quantum sensing; time resolved OES