Regensburg 2025 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 36: Materials and Devices for Quantum Technology II
HL 36.4: Talk
Wednesday, March 19, 2025, 15:45–16:00, H13
Spectral Hole linewidths and donor-acceptor dynamics in ultra-pure 28-Si:P — •Nico Eggeling1, Finja Tadge1, N.V. Abrosimov2, Jens Hübner1, and Michael Oestreich1 — 1Leibniz Universität Hannover, Germany — 2IKZ Berlin, Germany
Donor-bound excitons in ultra-pure silicon show significant inhomogeneous broadening, which can be studied in detail using spectral hole burning[1]. Surprisingly, for decreasing pump intensities, the linewidth of these holes does not approach the natural transition linewidth, resulting from the dominating Auger effect at low temperatures[2]. Instead, time-dependent experiments show that the width and decay of the spectral holes change significantly with temperature and magnetic field, which an intricate model including donor-acceptor pair recombination can explain.
[1] J. J. Berry, et al. Appl. Phy. Lett. 88, 061114, (2006).
[2] Yang, et al. Appl. Phy. Lett. 95, 122113, (2009).
Keywords: Silicon; Broadening; QuBit; Recombination; Linewidth