Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 37: Focus Session: Physics of the van der Waals Magnetic Semiconductor CrSBr I (joint session HL/MA)
HL 37.2: Talk
Wednesday, March 19, 2025, 15:15–15:30, H15
Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe2/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures — •Andreas Beer1, Klaus Zollner1, Caique Serati de Brito1,2, Paulo E. Feria Junior1, Philipp Parzefall1, Talieh S. Ghiasi3, Josep Ingla Aynés3, Samuel Mañas-Valero4, Carla Boix-Constant4, Kenji Watanabe5, Takashi Taniguchi5, Jaroslav Fabian1, Herre S. J. van der Zant3, Yara Galvão Gobato2, and Christian Schüller1 — 1UR, Regensburg, Germany — 2UFSCar, São Carlos, Brazil — 3TU, Delft, Netherlands — 4ICMol, València, Spain — 5NIMSC, Tsukuba, Japan
We report a comprehensive optical study of a ML-MoSe2 on the layered A-type antiferromagnetic semiconductor CrSBr. The band alignment of the material combination is under debate. Here, we adopt the type-III band alignment picture. By performing co-circular polarized PL and reflection contrast (RC) experiments, we observe that the atomic proximity of the materials leads to an unexpected breaking of time-reversal symmetry, despite the originally perpendicular spin texture in both materials, which are further supported by first-principles calculations. Moreover, time-resolved PL and time-resolved RC measurements identify a very long-lived dynamic charge-transfer process in the heterostructure, consistent with a type-III band alignment. Our findings suggest band bending, and efficient Förster resonance energy transfer within the heterostructure. Finally time resolved Kerr ellipticity measurements reveal a two magnitudes prolonged valley lifetime.
Keywords: Heterostructure; MoSe2; CrSBr; proximity; time resolved