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HL: Fachverband Halbleiterphysik

HL 37: Focus Session: Physics of the van der Waals Magnetic Semiconductor CrSBr I (joint session HL/MA)

HL 37.2: Vortrag

Mittwoch, 19. März 2025, 15:15–15:30, H15

Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe₂/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures — •Andreas Beer¹, Klaus Zollner¹, Caique Serati de Brito^1,2, Paulo E. Feria Junior¹, Philipp Parzefall¹, Talieh S. Ghiasi³, Josep Ingla Aynés³, Samuel Mañas-Valero⁴, Carla Boix-Constant⁴, Kenji Watanabe⁵, Takashi Taniguchi⁵, Jaroslav Fabian¹, Herre S. J. van der Zant³, Yara Galvão Gobato², and Christian Schüller¹ — ¹UR, Regensburg, Germany — ²UFSCar, São Carlos, Brazil — ³TU, Delft, Netherlands — ⁴ICMol, València, Spain — ⁵NIMSC, Tsukuba, Japan

We report a comprehensive optical study of a ML-MoSe₂ on the layered A-type antiferromagnetic semiconductor CrSBr. The band alignment of the material combination is under debate. Here, we adopt the type-III band alignment picture. By performing co-circular polarized PL and reflection contrast (RC) experiments, we observe that the atomic proximity of the materials leads to an unexpected breaking of time-reversal symmetry, despite the originally perpendicular spin texture in both materials, which are further supported by first-principles calculations. Moreover, time-resolved PL and time-resolved RC measurements identify a very long-lived dynamic charge-transfer process in the heterostructure, consistent with a type-III band alignment. Our findings suggest band bending, and efficient Förster resonance energy transfer within the heterostructure. Finally time resolved Kerr ellipticity measurements reveal a two magnitudes prolonged valley lifetime.

Keywords: Heterostructure; MoSe2; CrSBr; proximity; time resolved