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HL: Fachverband Halbleiterphysik
HL 39: Poster III
HL 39.2: Poster
Mittwoch, 19. März 2025, 15:00–18:00, P3
MATRIX: GaN diode arrays for proton monitoring and imaging — •Nico Brosda1, Stéphane Higueret2, Thê-Duc Lê2, Andreas Wieck1, Maxime Hugues3, Matilde Siviero3, and Jean-Yves Duboz3 — 1Lehrstuhl für angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany — 2Université de Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France — 3Université Côte d’Azur, CNRS, CRHEA, 06560, Valbonne, France
The MATRIX project is pioneering advancements in proton therapy for cancer treatment by developing novel, highly durable detectors that enhance real-time control of irradiation doses. Proton detection is achieved by measuring the current induced in the active regions of PIN GaN diodes. Our GaN-based devices are fabricated as linear diode arrays of 128 elements and two-dimensional imaging arrays up to 11×11 elements, covering an area of 1 cm2 with up to 500 µm spatial resolution. Thanks to the microelectronics processes, a much higher resolution can be obtained if needed. Results concerning the sample structure and fabrication process are presented. The design of bonding contacts proved to have a significant impact on the measured signal and, thus, the imaging quality. A bonding fanout on the GaN samples introduced notable signal distortions at the edges of the proton irradiation field. The underlying electron external emission mechanism responsible for this distortion was modeled, and a correction method was developed. An adapted sample design improved the device quality and removed the signal distortion. These findings pave the way for optimizing future GaN-based proton detector arrays.
Keywords: PIN diodes; semicondcutor detector; fotolithographic processing; medical application; proton therapy