Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 39: Poster III
HL 39.5: Poster
Wednesday, March 19, 2025, 15:00–18:00, P3
Theoretical Study on the (In, Ga)N/GaN heterojunction — •Maximilian Lauer1,2, Jan M. Waack1,2, Michael Czerner1,2, and Christian Heiliger1,2 — 1Institut für theoretische Physik, Justus-Liebig-Universität Gießen, Germany — 2Center for Materials Research (LaMa), Justus-Liebig-Universität Gießen, Germany
Semiconductor materials have a wide range of applications and their electronic properties can be easily tuned by alloying and changing their composition x. Understanding the properties of semiconductor alloys, such as indium gallium nitride InxGa1−xN, is therefore an important area of research. Two such properties are the band gap of the semiconductor and its band alignment with substrate and conduction materials.
While the band gap of the random alloy (In, Ga)N is a well-established quantity, the band alignment is less well understood.
Our research aims to better understand the band alignment and interface states at a GaN/(Ga,In)N heterojunction and its impact on the electronic properties of the system.To achieve this, we performed DFT calculations using the Korringa-Kohn-Rostoker (KKR) formalism with the coherent potential approximation (CPA). From these calculations we computed the layer-resolved density of states (DOS) for varying InxGa1−xN compositions. This approach can be further used to simulate the effects of doping on the electronic properties or to study the transport properties of such a system.
Keywords: DFT; InGaN; (Ga,In)N; heterojunction; CPA